EE 241 Spring 2005 Project FinFET Subthreshold CMOS for Ultralow-Power Applications
نویسنده
چکیده
The scale-down of CMOS technology has been the driving force for the realization of high-performance very-large scale integration (VLSI) systems [1]. As the MOSFET channel length is reduced to 50nm and below, the suppression of the off-state leakage becomes an increasingly difficult technological challenge. However, the off-state leakage can be utilized as the operating current to achieve ultralow-power applications, such as portable wireless devices, medical devices [2-3]. A subthreshold circuit has been shown to consume orders of magnitude less power than the regular strong-inversion circuit at the same operating frequency [3].
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